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May 2001 FQP27P06 QFET TM FQP27P06

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FQP27P06-datasheet .FQP27P06 May 2001 QFET FQP27P06 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe,DMOS technology.This advanced technology has [..mosfet - documentos en PDFFQP27P06-datasheet .FQP27P06 May 2001 QFET FQP27P06 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe,DMOS technology.This advanced technology has [..Some results are removed in response to a notice of local law requirement.For more information,please see here.Previous123456NextFQP27P06 datasheet(1/8 Pages) FAIRCHILD 60V P-ChannelTranslate this pageFQP27P06 (HTML) 1 Page - Fairchild Semiconductor zoom in zoom out / 8 page 1 / 8 page.May 2001.QFET TM May 2001 FQP27P06 QFET TM FQP27P06#169;2001 Fairchild Semiconductor Corporation.Rev.A2.May 2001.FQP27P06.60V P-Channel MOSFET.General Description.These P-Channel enhancement mode power field effect.

Some results are removed in response to a notice of local law requirement.For more information,please see here.12345NextFQP27P06_ - wenku.baidu

Translate this pageFQP27P06 FQP27P06 60V P-Channel MOSFET May 2001 QFET TM General Description These P-Channel enhan FQP27P06 FQP27P06 60V P-Channel MOSFET May 2001 QFET TM General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary,planar stripe,DMOS technology.Some results are removed in response to a notice of local law requirement.For more information,please see here.ON Semiconductorpower mosfet,n-channel,unifet tm,60 v,65 a,16 m,to-220 power mosfet,n-channel,unifet tm,60 v,65 a,16 m qfet May 2001 FQP27P06 QFET TM FQP27P06#174;,300 v,3.2 a,2 to the full extent such may be disclaimed by law.on semiconductor's total liability for any and all costs,damages,claims,indemnificable claims,or losses whatsoever arising out of or in

May 2001 FQP27P06 QFET TM FQP27P06

FQP27P06 May 2001 FQP27P06 QFET TM FQP27P06#169;2001 Fairchild Semiconductor Corporation Rev.A2.May 2001 Elerical Characteristics TC = 25 May 2001 FQP27P06 QFET TM FQP27P06#176;C unless otherwise noted Notes 1.Repetitive Rating Pulse width limited by maximum junction temperature 2.L = 0.9mH,IAS = -27A,VDD = -25V,R G = 25 ,Starting TJ = 25 May 2001 FQP27P06 QFET TM FQP27P06#176;C 3.ISD -27A,di/dt 300A/ May 2001 FQP27P06 QFET TM FQP27P06#181;s,VDD BVDSS,Starting TJ Images of May 2001 FQP27P06 Qfet Tm FQP27P06 imagesFQP27P06 Final DS Rev.C0 20130402FQP27P06 P-Channel QFET May 2001 FQP27P06 QFET TM FQP27P06MOSFET Publication Order Number FQP27P06/D May 2001 FQP27P06 QFET TM FQP27P06#169;2001 Semiconductor Components Industries,LLC.October-2017,Rev.3 FQP27P06 P-Channel QFET May 2001 FQP27P06 QFET TM FQP27P06MOSFET - 60 V,- 27 A,70 m Description This P-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar stripe and DMOS technology.This File Size 746KBPage Count 8FQP27P06 datasheet(1/8 Pages) FAIRCHILD 60V P-ChannelMay 2001QFETTM May 2001 FQP27P06 QFET TM FQP27P06#169;2001 Fairchild Semiconductor CorporationRev.A2.May 2001FQP27P0660V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary,planar stripe,DMOS technology.datasheet search,datasheets,Datasheet search site for Electronic Components and Semiconductors,integrated

FQU17P06 datasheet(1/9 Pages) FAIRCHILD 60V P-Channel

May 2001QFETTM May 2001 FQP27P06 QFET TM FQP27P06#169;2001 Fairchild Semiconductor CorporationRev.A2.May 2001FQD17P06 / FQU17P0660V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary,planar stripe,DMOS technology.datasheet search,datasheets,Datasheet search site for Electronic Components and Semiconductors,FQU17P06 datasheet applicatoin notes - Datasheet ArchiveText QFET TM FQD17P06 / FQU17P06 60V P-Channel MOSFET General Description Features These ,Parameter Drain-Source Voltage - Continuous (TC = 25 May 2001 FQP27P06 QFET TM FQP27P06#176;C) Drain Current FQD17P06 / FQU17P06-60 ,Fairchild Semiconductor Corporation Rev.A2.May 2001 FQD17P06 / FQU17P06 May 2001FQU17P06 datasheet applicatoin notes - Datasheet ArchiveText QFET TM FQD17P06 / FQU17P06 60V P-Channel MOSFET General Description Features These ,Parameter Drain-Source Voltage - Continuous (TC = 25 May 2001 FQP27P06 QFET TM FQP27P06#176;C) Drain Current FQD17P06 / FQU17P06-60 ,Fairchild Semiconductor Corporation Rev.A2.May 2001 FQD17P06 / FQU17P06 May 2001

FQP9N90C / FQPF9N90C N-Channel QFET MOSFET 900 V,

Maximum Drain Current vs Case Temperature May 2001 FQP27P06 QFET TM FQP27P06#169;2003 Fairchild Semiconductor Corporation FQP9N90C / FQPF9N90C Rev.C1 4 fairchildsemi FQP9N90C / FQPF9N90C N-Channel QFET May 2001 FQP27P06 QFET TM FQP27P06MOSFET Typical Characteristics Z JC(t),Thermal Response [oC/W] 10 FQP9N90C / FQPF9N90C N-Channel QFET May 2001 FQP27P06 QFET TM FQP27P06MOSFET Typical Characteristics (Continued) 0 D = 0 .5 0 FQP7P06 datasheet applicatoin notes - Datasheet ArchiveText QFET TM FQP7P06 60V P-Channel MOSFET General Description Features These P-Channel ,Voltage - Continuous (TC = 25 May 2001 FQP27P06 QFET TM FQP27P06#176;C) Drain Current FQP7P06-60 -7.0 IDM Drain Current ,FQP7P06 May 2001 Symbol TC = 25 May 2001 FQP27P06 QFET TM FQP27P06#176;C unless otherwise noted Parameter Test Conditions Min ,Semiconductor Corporation Rev.A2.FQP7P06 datasheet applicatoin notes - Datasheet ArchiveText QFET TM FQP7P06 60V P-Channel MOSFET General Description Features These P-Channel ,Voltage - Continuous (TC = 25 May 2001 FQP27P06 QFET TM FQP27P06#176;C) Drain Current FQP7P06-60 -7.0 IDM Drain Current ,FQP7P06 May 2001 Symbol TC = 25 May 2001 FQP27P06 QFET TM FQP27P06#176;C unless otherwise noted Parameter Test Conditions Min ,Semiconductor Corporation Rev.A2.

FQP47P06 datasheet applicatoin notes - Datasheet Archive

2001 - FQP47P06.Abstract No abstract text available Text QFET TM FQP47P06 60V P-Channel MOSFET General Description Features These P-Channel ,Drain-Source Voltage - Continuous (TC = 25 May 2001 FQP27P06 QFET TM FQP27P06#176;C) Drain Current FQP47P06-60 -47 IDM Drain Current ,Rev.A2.May 2001 FQP47P06 May 2001FQP47P06 datasheet applicatoin notes - Datasheet Archive2001 - FQP47P06.Abstract No abstract text available Text QFET TM FQP47P06 60V P-Channel MOSFET General Description Features These P-Channel ,Drain-Source Voltage - Continuous (TC = 25 May 2001 FQP27P06 QFET TM FQP27P06#176;C) Drain Current FQP47P06-60 -47 IDM Drain Current ,Rev.A2.May 2001 FQP47P06 May 2001FQP30N06L datasheet(1/8 Pages) FAIRCHILD 60V LOGIC N May 2001.QFET TM May 2001 FQP27P06 QFET TM FQP27P06#169;2001 Fairchild Semiconductor Corporation.Rev.A1.May 2001.FQP30N06L.60V LOGIC N-Channel MOSFET.General Description.These N-Channel enhancement mode power field effect.transistors are produced using Fairchilds proprietary,planar stripe,DMOS technology.

FQP30N06L 60V LOGIC N-Channel MOSFET

May 2001 FQP27P06 QFET TM FQP27P06#169;2001 Fairchild Semiconductor Corporation Rev.A1.May 2001 0 5 10 15 20 25 30 0 2 4 6 8 10 12 V DS = 30V V DS = 48V Note I D = 32A V GS,Gate-Source Voltage [V] Q G,Total Gate Charge [nC] 10-1 100 101 0 500 1000 1500 2000 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes 1.V GS = 0 V 2.f = 1 MHz C rss FQP27P06_ - wenku.baiduTranslate this pageFQP27P06 FQP27P06 60V P-Channel MOSFET May 2001 QFET TM General Description These P-Channel enhan FQP27P06 FQP27P06 60V P-Channel MOSFET May 2001 QFET TM General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary,planar stripe,DMOS technology.FQP27P06 datasheet(1/8 Pages) FAIRCHILD 60V P-ChannelTranslate this pageFQP27P06 (HTML) 1 Page - Fairchild Semiconductor zoom in zoom out / 8 page 1 / 8 page.May 2001.QFET TM May 2001 FQP27P06 QFET TM FQP27P06#169;2001 Fairchild Semiconductor Corporation.Rev.A2.May 2001.FQP27P06.60V P-Channel MOSFET.General Description.These P-Channel enhancement mode power field effect.

FQP27P06 P-Channel QFET FQP27P06 MOSFET

FQP27P06 P-Channel QFET May 2001 FQP27P06 QFET TM FQP27P06MOSFET 3XEOLFDWLRQ2UGHU1XPEHU )43 3 ' May 2001 FQP27P06 QFET TM FQP27P06#169;2001 6HPLFRQGXFWRURPSRQHQWV,QGXVWULHV // 2FWREHU Rev.FQP27P06 P -Channel QFET May 2001 FQP27P06 QFET TM FQP27P06MOSFET - 60 V,- 27 A,70 m Description This P-Channel enhancement mode power MOSFET is produced using 21 Semiconductor s proprietary planar stripe and DMOS technology.This advancedFQP27P06 MOSFET.Datasheet.Equivalente.Reemplazo.Hoja fqp27p06 sw82127.pdf Size:726K _fairchild_semi May 2001 TM QFET FQP27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A,-60V,RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC) planar stripe,DMOS technologyFQP27P06 MOSFET Datasheet pdf - Equivalent.Cross FQP27P06 Datasheet (PDF) 1.1.fqp27p06.pdf Size:746K _fairchild_semi May 2001 TM QFET FQP27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A,-60V,RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC) planar stripe,DMOS technology

FQP27P06 -

Translate this pageMay2001 QF ET TM 2001Fairchild Semiconductor Corporation Rev.A2.May 2001 FQP27P06 60V P-Channel MOSFET General Description P-Channelenhancement mode power field effect transistors producedusing Fairchilds proprietary,planar stripe,DMOS technology.advancedtechnology has been especially tailored minimizeon-state resistance,provide superior switching performance,highenergyFQP27P06 - Translate this pageMay2001 QF ET TM 2001Fairchild Semiconductor Corporation Rev.A2.May 2001 FQP27P06 60V P-Channel MOSFET General Description P-Channelenhancement mode power field effect transistors producedusing Fairchilds proprietary,planar stripe,DMOS technology.advancedtechnology has been especially tailored minimizeon-state resistance,provide superior switching performance,highenergyFQP27N25 MOSFET Datasheet pdf - Equivalent.Cross fqp27p06 sw82127.pdf Size:726K _fairchild_semi May 2001 TM QFET FQP27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A,-60V,RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC) planar stripe,DMOS technology

FQP20N06 MOSFET Datasheet pdf - Equivalent.Cross

FQP20N06 Datasheet (PDF) 1.1.fqp20n06l.pdf Size:673K _fairchild_semi May 2001 TM QFET FQP20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 21A,60V,RDS(on) = 0.055 @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.5 nC) planar stripe,DMOSFQP17P10_Translate this pageFQP17P10 FQP17P10 100V P-Channel MOSFET QFET TM General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary,planar stripe,DMOS technology. Specifications may change in any manner without notice.This datasheet contains preliminary data,and supplementary data will be FQP17P06 datasheet(1/8 Pages) FAIRCHILD 60V P-ChannelTranslate this pageMay 2001.QFET TM May 2001 FQP27P06 QFET TM FQP27P06#169;2001 Fairchild Semiconductor Corporation.Rev.A2.May 2001.FQP17P06.60V P-Channel MOSFET.General Description.These P-Channel enhancement mode power field effect.transistors are produced using Fairchilds proprietary,planar stripe,DMOS technology.

FQP17P06 datasheet(1/8 Pages) FAIRCHILD 60V P-Channel

Translate this pageMay 2001.QFET TM May 2001 FQP27P06 QFET TM FQP27P06#169;2001 Fairchild Semiconductor Corporation.Rev.A2.May 2001.FQP17P06.60V P-Channel MOSFET.General Description.These P-Channel enhancement mode power field effect.transistors are produced using Fairchilds proprietary,planar stripe,DMOS technology.FQP17P06 datasheet(1/8 Pages) FAIRCHILD 60V P-ChannelMay 2001QFETTM May 2001 FQP27P06 QFET TM FQP27P06#169;2001 Fairchild Semiconductor CorporationRev.A2.May 2001FQP17P0660V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary,planar stripe,DMOS technology.datasheet search,datasheets,Datasheet search site for Electronic Components and Semiconductors,integratedFQP17P06 datasheet(1/8 Pages) FAIRCHILD 60V P-ChannelMay 2001QFETTM May 2001 FQP27P06 QFET TM FQP27P06#169;2001 Fairchild Semiconductor CorporationRev.A2.May 2001FQP17P0660V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary,planar stripe,DMOS technology.datasheet search,datasheets,Datasheet search site for Electronic Components and Semiconductors,integrated

FQP17P06 datasheet applicatoin notes - Datasheet Archive

Text QFET TM FQP17P06 60V P-Channel MOSFET General Description Features These P-Channel ,Voltage - Continuous (TC = 25 May 2001 FQP27P06 QFET TM FQP27P06#176;C) Drain Current FQP17P06-60 -17 IDM Drain Current VGSS ,FQP17P06 May 2001 Symbol TC = 25 May 2001 FQP27P06 QFET TM FQP27P06#176;C unless otherwise noted Parameter Test Conditions Min ,Corporation Rev.A2.FQB7P06 datasheet(1/9 Pages) FAIRCHILD 60V P-ChannelTranslate this pageMay 2001.QFET TM May 2001 FQP27P06 QFET TM FQP27P06#169;2001 Fairchild Semiconductor Corporation.Rev.A2.May 2001.FQB7P06 / FQI7P06.60V P-Channel MOSFET.General Description.These P-Channel enhancement mode power field effect.transistors are produced using Fairchilds proprietary,planar stripe,DMOS technology.FQB17P06 datasheet(1/9 Pages) FAIRCHILD 60V P-ChannelMay 2001.QFET TM May 2001 FQP27P06 QFET TM FQP27P06#169;2001 Fairchild Semiconductor Corporation.Rev.A2.May 2001.FQB17P06 / FQI17P06.60V P-Channel MOSFET.General Description.These P-Channel enhancement mode power field effect.transistors are produced using Fairchilds proprietary,planar stripe,DMOS technology.

FQB11P06 datasheet(1/9 Pages) FAIRCHILD 60V P-Channel

Translate this pageMay 2001.QFET TM May 2001 FQP27P06 QFET TM FQP27P06#169;2001 Fairchild Semiconductor Corporation.Rev.A4.May 2001.FQB11P06 / FQI11P06.60V P-Channel MOSFET.General Description.These P-Channel enhancement mode power field effect.transistors are produced using Fairchilds proprietary,planar stripe,DMOS technology.FQAF47P06 datasheet(1/8 Pages) FAIRCHILD 60V PTranslate this pageMay 2001QFETTM May 2001 FQP27P06 QFET TM FQP27P06#169;2001 Fairchild Semiconductor CorporationRev.A2.May 2001FQAF47P0660V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary,planar stripe,DMOS technology.datasheet search,datasheets,Datasheet search site for Electronic Components and Semiconductors,integrated

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